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Volumn 22, Issue 14-15, 2002, Pages 2749-2756

High-temperature active/passive oxidation and bubble formation of CVD SiC in O2 and CO2 atmospheres

Author keywords

Chemical vapor deposition; Corrosion; SiC; Structural applications; Surfaces

Indexed keywords

ACTIVATION ENERGY; BUBBLE FORMATION; CHEMICAL VAPOR DEPOSITION; OXIDATION; PARTIAL PRESSURE;

EID: 0036386437     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(02)00139-5     Document Type: Article
Times cited : (71)

References (25)
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    • (1974) Silicon Carbide 1973 , pp. 320
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  • 9
    • 36849138946 scopus 로고
    • Passivity during the oxidation of silicon at elevated temperatures
    • (1958) J. Appl. Phys , vol.29 , pp. 1259
    • Wagner, C.1
  • 17
    • 0025507467 scopus 로고
    • Volatility diagrams for silica, silicon nitride and silicon carbide and their application to high-temperature decomposition and oxidation
    • (1990) J. Am. Ceram. Soc , vol.73 , pp. 2785
    • Heuer, A.1    Lou, V.L.K.2
  • 18
    • 0032650335 scopus 로고    scopus 로고
    • Oxidation resistance of silicon-based ceramics
    • (1999) Corr. Eng , vol.48 , pp. 169
    • Goto, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.