Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots

Carbon

Volumn 75, Issue , 2014, Pages 244-248

  Yun, Dong Yeol ^a   Park, Hun Min ^a   Kim, Sung Woo ^b   Kim, Sang Wook ^b   Kim, Tae Whan ^a  

^a Hanyang University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; SEMICONDUCTOR QUANTUM DOTS; THERMIONIC EMISSION;

CURRENT VOLTAGE CURVE; HIGH CONDUCTIVITY; IV CHARACTERISTICS; MEMORY STABILITIES; NON-VOLATILE MEMORY; ON- AND OFF-CURRENTS; ORGANIC BISTABLE DEVICE; SPACE-CHARGE-LIMITED CURRENT;

TIN OXIDES;

EID: 84900797021     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.03.059     Document Type: Article

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