High-performance nanocomposite based memristor with controlled quantum dots as charge traps

ACS Applied Materials and Interfaces

Volumn 5, Issue 6, 2013, Pages 2249-2254

  Younis, Adnan ^a   Chu, Dewei ^a   Lin, Xi ^a   Yi, Jiabao ^a   Dang, Feng ^b   Li, Sean ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

charge transport; charge traps; electrochemical deposition; quantum dots; resistive switching; solvothermal process

Indexed keywords

CHARGE TRAP; ELECTROCHEMICAL DEPOSITION; RESISTIVE SWITCHING; SEMICONDUCTOR NANORODS; SOLVOTHERMAL METHOD; SOLVOTHERMAL PROCESS; TRANSPARENT CONDUCTIVE; VERTICALLY ALIGNED;

CHARGE TRANSFER; CHARGE TRAPPING; DEPOSITION; ELECTRODEPOSITION; NANOCOMPOSITES; NANORODS; REDUCTION; SWITCHING SYSTEMS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

NANOCOMPOSITE; NANOMATERIAL; QUANTUM DOT; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; METHODOLOGY; NANOTECHNOLOGY;

ELECTROCHEMISTRY; NANOCOMPOSITES; NANOSTRUCTURES; NANOTECHNOLOGY; QUANTUM DOTS; ZINC OXIDE;

EID: 84875706963     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400168m     Document Type: Article

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