Photo-generated parasitical capacitance model of GaN-based pin ultraviolet detector

2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Volumn , Issue , 2009, Pages 505-508

  Gao, Bo ^a   Liu, Hongxia ^a   Kuang, Qianwei ^a   Zhou, Wen ^a   Cao, Lei ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

GaN based; Photo generated parasitical capacitance; Pin; Ultraviolet detector

Indexed keywords

APPLIED VOLTAGES; BARRIER CAPACITANCE; CARRIER NUMBERS; DEPLETION REGION; DIFFERENTIAL CAPACITANCE; DOPING CONCENTRATION; GAN-BASED; LIGHT IRRADIATIONS; PARASITICAL CAPACITANCE; RESPONSE TIME; ULTRA-VIOLET;

CUTOFF FREQUENCY; DETECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; SOLID STATE DEVICES; ULTRAVIOLET DETECTORS;

CAPACITANCE;

EID: 77949651784     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2009.5394202     Document Type: Conference Paper

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