Design of a GaN white light-emitting diode through envelope function analysis

IEEE Journal of Quantum Electronics

Volumn 46, Issue 2, 2010, Pages 228-237

  Khoshnegar, Milad ^a   Sodagar, Majid ^a   Eftekharian, Amin ^a   Khorasani, Sina ^a  

^a SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Envelope function analysis; Gan; K p method; Optical intensity spectrum; White LED

Indexed keywords

ATOMIC TRANSITION; BLUE EMISSION; EMISSION SPECTRUMS; ENVELOPE FUNCTION APPROXIMATIONS; ENVELOPE FUNCTIONS; HETEROSTRUCTURES; HOLE WAVE FUNCTIONS; INTERBAND; INTERNAL FIELD; K-P METHOD; LUTTINGER HAMILTONIAN; MATERIAL COMPOSITIONS; MATRIX ELEMENTS; OPTICAL INTENSITIES; ORTHOGONAL POLARIZATIONS; PHOTOLUMINESCENCE INTENSITIES; QUANTUM WELL; RED EMITTER; SPATIAL VARIATIONS; SPECIAL BASIS; SPONTANEOUS POLARIZATIONS; STOKES SHIFT; SUB-BANDS; WELL THICKNESS; WHITE LED; WHITE LIGHT EMITTING DIODES;

DIODES; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; FIBER OPTIC SENSORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSFER MATRIX METHOD; WAVE FUNCTIONS;

ORTHOGONAL FUNCTIONS;

EID: 73949140264     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2032556     Document Type: Article

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