Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing

Journal of Applied Physics

Volumn 115, Issue 6, 2014, Pages

  Sankaran, K J ^a   Panda, K ^b   Sundaravel, B ^b   Tai, N H ^a   Lin, I N ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COPPER; COPPER METALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; FIELD EMISSION; GRAIN BOUNDARIES; HALL MOBILITY; HEAVY IONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLE MOBILITY; ION IMPLANTATION; METAL IONS; SCANNING TUNNELING MICROSCOPY;

COPPER ION IMPLANTATION; ELECTRICAL CONDUCTIVITY; ELECTRON FIELD EMISSION; ELECTRON FIELD EMISSION PROPERTIES; HIGH ELECTRICAL CONDUCTIVITY; SPECTROSCOPIC MEASUREMENTS; ULTRA-NANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

ELECTRON EMISSION;

EID: 84899830791     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4865325     Document Type: Article

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