Enhancing electron field emission properties of UNCD films through nitrogen incorporation at high substrate temperature

Diamond and Related Materials

Volumn 20, Issue 2, 2011, Pages 191-195

  Lin, Y C ^a   Sankaran, K J ^a   Chen, Y C ^a   Lee, C Y ^a   Chen, H C ^b   Lin, I N ^b   Tai, N H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAMKANG UNIVERSITY   (Taiwan)

Author keywords

Electrochemical properties; Electron field emission properties; N2 doped UNCD

Indexed keywords

APPLIED FIELD; BACKGROUND CURRENT; ELECTRON FIELD EMISSION; ELECTRON FIELD EMISSION PROPERTIES; ELEVATED TEMPERATURE; HIGH SUBSTRATE TEMPERATURE; MICROSTRUCTURE EXAMINATION; N2-DOPED UNCD; NITROGEN INCORPORATION; POTENTIAL WINDOWS; REDOX PEAKS; SUBSTRATE HEATING; TEM; ULTRA-NANOCRYSTALLINE DIAMOND;

ELECTROCHEMISTRY; ELECTRONS; FIELD EMISSION; FILM GROWTH; HEATING; STACKING FAULTS;

ELECTROCHEMICAL PROPERTIES;

EID: 79551560537     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.11.026     Document Type: Article

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