Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films

Applied Physics Letters

Volumn 99, Issue 13, 2011, Pages

  Hu, X J ^a   Ye, J S ^a   Hu, H ^a   Chen, X H ^a   Shen, Y G ^b  

^a ZHEJIANG UNIVERSITY OF TECHNOLOGY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND GRAINS; HIGH-TEMPERATURE ANNEALING; HYDROGEN DIFFUSION; ION IMPLANTED; MICROSTRUCTURE EVOLUTIONS; N-TYPE CONDUCTIVITY; NANO-SIZED; STRESS RELEASE; ULTRANANOCRYSTALLINE DIAMOND FILMS;

AMORPHOUS CARBON; AMORPHOUS FILMS; ANNEALING; CARBON FILMS; CARRIER CONCENTRATION; CARRIER MOBILITY; DESORPTION; DIAMONDS; ELECTRIC PROPERTIES; HALL MOBILITY; HYDROGEN; ION IMPLANTATION; MICROSTRUCTURE; PHOSPHORUS;

DIAMOND FILMS;

EID: 80053539358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641458     Document Type: Article

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