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Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

N-type conductivity and phase transition in ultrananocrystalline diamond films by oxygen ion implantation and annealing

(6) Hu, X J a Ye, J S b Liu, H J a Shen, Y G c Chen, X H a Hu, H a

a ZHEJIANG UNIVERSITY OF TECHNOLOGY (China)

b Hangzhou Iron and Steel Group Co (China)

c CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CONDUCTION CONTROL; CONDUCTION MECHANISM; CURRENT PATHS; DIAMOND GRAINS; METALLIC CONDUCTION; N-TYPE CONDUCTIVITY; NANO-SIZED; OXYGEN ION IMPLANTATION; SEMI-CONDUCTION; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS; UV-RAMAN SPECTROSCOPY;

AMORPHOUS CARBON; ANNEALING; CARBON FILMS; CARRIER MOBILITY; DIAMOND FILMS; DIAMONDS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL EFFECT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; OXYGEN; PHASE TRANSITIONS; RAMAN SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 79953000003 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556741 Document Type: Article

Times cited : (59)

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