Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering

Thin Solid Films

Volumn 559, Issue , 2014, Pages 112-115

  Suzuki, Issei ^a   Nagatani, Hiraku ^a   Arima, Yuta ^a   Kita, Masao ^b   Omata, Takahisa ^a  

^a OSAKA UNIVERSITY   (Japan)

^b TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Oxide semiconductor; Wurtzite structure; Zinc oxide

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ENERGY GAP; FABRICATION; II-VI SEMICONDUCTORS; LIGHT TRANSMISSION; MORPHOLOGY; OXIDE SEMICONDUCTORS; RADIO WAVES; SUBSTRATES; THIN FILMS; ZINC OXIDE; ZINC SULFIDE;

EXPERIMENTAL PARAMETERS; PHOTOCURRENT SPECTRUM; RADIO FREQUENCY MAGNETRON SPUTTERING; SPUTTERING ATMOSPHERE; SPUTTERING CONDITIONS; SUBSTRATE TEMPERATURE; TYPE STRUCTURES; WURTZITE STRUCTURE;

MAGNETRON SPUTTERING;

EID: 84899517137     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.10.099     Document Type: Conference Paper

References (25)

1. M. Marezio Acta Crystallogr. 18 1965 481
2. C.H. Chang, and J.L. Margrave J. Am. Chem. Soc. 90 1968 2020
3. Y. Maruyama, H. Irie, and K. Hashimoto J. Phys. Chem. B 110 2006 23274
4. S. Ouyang, N. Kikugawa, D. Chem, Z. Zou, and J. Ye J. Phys. Chem. 113 2009 1560
5. S. Ouyang, and J. Ye J. Am. Chem. Soc. 133 2011 7757
6. E. Thilo, and W. Gessner Z. Anorg. Allg. Chem. 345 1966 151
7. W. Gessner Z. Anorg. Allg. Chem. 352 1967 145
8. T. Omata, K. Tanaka, A. Tazuke, K. Nose, and S. Otsuka-Yao-Matsuo J. Appl. Phys. 103 2008 083706
9. T. Omata, K. Tanaka, A. Tazuke, K. Nose, and S. Otsuka-Yao-Matsuo Sci. China Ser. E Technol. Sci. 52 2009 111
10. T. Omata, M. Kita, K. Nose, K. Tachibana, and S. Otsuka-Yao-Matsuo Jpn. J. Appl. Phys. 50 2011 031102
11. T. Omata, K. Tanaka, and S. Otsuka-Yao-Matsuo Jpn. J. Appl. Phys. 50 2011 061102
12. T. Omata, M. Kita, K. Tachibana, and S. Otsuka-Yao-Matsuo J. Solid State Chem. 188 2012 92
13. Th. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck Appl. Phys. Lett. 83 2003 3290
14. S. Shigemori, A. Nakamura, J. Ishihara, T. Aoki, and J. Temmyo Jpn. J. Appl. Phys. 43 2004 1088
15. P. Misra, P.K. Sahoo, P. Tripathi, V.N. Kulkarni, R.V. Nandedkar, and L.M. Kukreja Appl. Phys. A Mater. 78 2004 37
16. X.J. Wang, I.A. Buyanova, W.M. Chen, M. Izadifard, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong, and Amir Dabiran Appl. Phys. Lett. 89 2006 151909
17. S. Anandan, N. Ohashi, and M. Miyauchi Appl. Catal. B 100 2010 502
18. K.A. Vanaja, R.S. Ajimsha, A.S. Asha, and M.K. Jayaraj Appl. Phys. Lett. 88 2006 212103
19. K.A. Vanaja, R.S. Ajimsha, A.S. Asha, K. RajeevKumar, and M.K. Jayaraj Thin Solid Films 516 2008 1426
20. H.F. Liu, S.J. Chua, G.X. Hu, H. Gong, and N. Xiang J. Appl. Phys. 102 2007 083529
21. J. Narayan, K. Dovidenko, A.K. Sharma, and S. Oktyabrsky J. Appl. Phys. 84 1998 2597
22. H.B. Kang, K. Nakamura, K. Yoshida, and K. Ishikawa Jpn. J. Appl. Phys. 36 1997 933
23. Y. Chen, S. Hong, H. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa Appl. Phys. Lett. 78 2001 3352
24. J.H. Kim, and Y.H. Yoon J. Mater. Sci. Mater. Electron. 20 2009 879
25. G.A. Battiston, R. Gerbasi, M. Porchia, R. Bertoncello, and F. Caccavale Thin Solid Films 279 1996 115