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84906377111
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2 are indirect semiconductors.
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2 are indirect semiconductors.
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41
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20444433099
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We examined the photocatalytic activity of IPA decomposition in the presence of other visible light sensitive water-splitting photocatalysts, which have been already reported, under visible light irradiation with 10 14-1015 absorbed photon numbers. The quantum yield is 0.041% for AgNbO3 (band gap ≈ 2.8 eV10) and 0.039% for a GaN-ZnO solid solution band gap, 2.6 eV; Maeda, K, Tanaka, T, Hara, M, Saito, N, Inoue, Y, Kobayashi, H, Domen, K. J. Am. Chem. Soc. 2005, 127, 8286
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10) and 0.039% for a GaN-ZnO solid solution (band gap = 2.6 eV; Maeda, K.; Tanaka, T.; Hara, M.; Saito, N.; Inoue, Y.; Kobayashi, H.; Domen, K. J. Am. Chem. Soc. 2005, 127, 8286).
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84906377113
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3 has a relatively large band gap of 2.8 eV, contains 12-coordinated long A-O bonds (∼2.79 Å on average), and is considered to have weak bonds and interaction. The band structure calculated by VASP shows a larger band gap (1.68 eV) and small dispersion of the valence band, which should lead to a large effective mass and small hole conductivity.
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3 has a relatively large band gap of 2.8 eV, contains 12-coordinated long A-O bonds (∼2.79 Å on average), and is considered to have weak bonds and interaction. The band structure calculated by VASP shows a larger band gap (1.68 eV) and small dispersion of the valence band, which should lead to a large effective mass and small hole conductivity.
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