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Volumn 52, Issue 1, 2009, Pages 111-115
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Novel wide band gap alloyed semiconductors, x(LiGaO2) 1/2-(1-x)ZnO, and fabrication of their thin films
a
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Author keywords
Band gap engineering; Oxide electronics; Transparent conductor; Ultraviolet light; Zinc oxide
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Indexed keywords
BAND STRUCTURE;
CARRIER MOBILITY;
CERAMIC MATERIALS;
ELECTRIC CONDUCTIVITY;
ELECTRIC RESISTANCE;
ENERGY GAP;
FABRICATION;
GALVANOMAGNETIC EFFECTS;
HALL EFFECT;
HALL MOBILITY;
LATTICE CONSTANTS;
MAGNETIC FIELD EFFECTS;
METALLIC COMPOUNDS;
OXIDE FILMS;
OXIDES;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR MATERIALS;
SOLID STATE REACTIONS;
ULTRAVIOLET RADIATION;
ZINC;
ZINC ALLOYS;
ZINC OXIDE;
ZINC SULFIDE;
BAND GAP ENGINEERING;
CARRIER DENSITIES;
CERAMIC TARGETS;
COMPOSITION RANGES;
DEPOSITED FILMS;
ELECTRICAL RESISTIVITIES;
ENERGY BAND GAPS;
ENTIRE COMPOSITIONS;
OXIDE ELECTRONICS;
OXIDE SEMICONDUCTORS;
ROOM TEMPERATURES;
SEMI-CONDUCTORS;
SINGLE PHASES;
SOLID STATES;
TRANSPARENT CONDUCTOR;
ULTRAVIOLET LIGHT;
WIDE BANDS;
WURTZITE;
GALLIUM ALLOYS;
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EID: 58349116230
PISSN: 10069321
EISSN: 1862281X
Source Type: Journal
DOI: 10.1007/s11431-008-0335-y Document Type: Article |
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Times cited : (5)
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References (6)
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