MOCVD grown ZnO thin film gas sensors: Influence of microstructure

Sensors and Actuators, A: Physical

Volumn 213, Issue , 2014, Pages 52-58

  Pati, Sumati ^a   Banerji, P ^a   Majumder, S B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Chemisorption; Hall effect measurement; Microstructure; MOCVD; Thin films

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL DETECTION; CHEMICAL SENSORS; CHEMISORPTION; DEPOSITION; ENERGY GAP; GAS DETECTORS; GASES; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; OPTICAL FILMS; OXIDE MINERALS; TEXTURES; ZINC; ZINC OXIDE;

DEPOSITION PARAMETERS; ELECTRICAL PARAMETER; GAS SENSING CHARACTERISTICS; HALL EFFECT MEASUREMENT; MICROSTRUCTURE FORMATION; OPTICAL CHARACTERIZATION; UNIFORM DEPOSITION; VANDER PAUW GEOMETRY;

THIN FILMS;

EID: 84899476689     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2014.04.005     Document Type: Article

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