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Volumn 67, Issue , 2009, Pages 127-130
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Growth and characterization of urea doped p-type ZnO thin film grown by pulsed laser deposition
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Author keywords
Antisite defect; Carrier concentration; Hall mobility; p type ZnO; Resistivity
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Indexed keywords
ANTISITE DEFECT;
AS-GROWN FILMS;
BAND GAPS;
CONSTANT TEMPERATURE;
GLASS SUBSTRATES;
IN-VACUUM;
KRF LASERS;
NITROGEN-DOPED;
P TYPE ZNO THIN FILM;
P-TYPE BEHAVIORS;
P-TYPE ZNO;
POLYCRYSTALLINE;
PULSED-LASER DEPOSITION TECHNIQUE;
REPETITION RATE;
RESISTIVITY;
UV ABSORPTION SPECTROSCOPY;
WURTZITE STRUCTURE;
XRD PATTERNS;
ZNO;
ABSORPTION SPECTROSCOPY;
BIOACTIVITY;
CONCENTRATION (PROCESS);
DEPOSITION;
DOPING (ADDITIVES);
FILM GROWTH;
GALVANOMAGNETIC EFFECTS;
HALL MOBILITY;
KRYPTON;
LASERS;
METABOLISM;
METALLIC FILMS;
NITROGEN;
PULSED LASER DEPOSITION;
SEMICONDUCTING ZINC COMPOUNDS;
UREA;
VACUUM DEPOSITION;
ZINC OXIDE;
ZINC SULFIDE;
CARRIER CONCENTRATION;
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EID: 70350482187
PISSN: 10226680
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/AMR.67.127 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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