Fundamental oscillation up to 1.42 Thz in resonant tunneling diodes by optimized collector spacer thickness

Journal of Infrared, Millimeter, and Terahertz Waves

Volumn 35, Issue 5, 2014, Pages 425-431

  Kanaya, Hidetoshi ^a   Sogabe, Riku ^a   Maekawa, Takeru ^a   Suzuki, Safumi ^a   Asada, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

electron transit time; resonant tunneling diode; slot antenna; terahertz oscillators

Indexed keywords

OPTIMIZATION; RESONANT TUNNELING DIODES; SLOT ANTENNAS;

DEPLETION REGION; ELECTRON TRANSIT TIME; ELECTRON VELOCITY; FUNDAMENTAL OSCILLATIONS; HIGH FREQUENCY OSCILLATIONS; OPTIMUM THICKNESS; OSCILLATION FREQUENCY; TERAHERTZ OSCILLATORS;

TUNNEL DIODE OSCILLATORS;

EID: 84899423232     PISSN: 18666892     EISSN: 18666906     Source Type: Journal    
DOI: 10.1007/s10762-014-0058-z     Document Type: Article

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