Fundamental oscillation up to 1.31 THz in resonant tunneling diodes with thin well and barriers

Applied Physics Express

Volumn 5, Issue 12, 2012, Pages

  Kanaya, Hidetoshi ^a   Shibayama, Hirotaka ^a   Sogabe, Riku ^a   Suzuki, Safumi ^a   Asada, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DWELL TIME; FUNDAMENTAL OSCILLATIONS; OSCILLATION FREQUENCY; OUTPUT POWER; PLANAR SLOT ANTENNAS; RESONANCE REGION; ROOM TEMPERATURE; TERAHERTZ OSCILLATORS;

RESONANT TUNNELING DIODES; SLOT ANTENNAS; TEMPERATURE MEASURING INSTRUMENTS;

TUNNEL DIODE OSCILLATORS;

EID: 84871324337     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.124101     Document Type: Article

References (21)

1. M. Tonouchi: Nat. Photonics 1 (2007) 97.
2. T. Kleine-Ostmann and T. Nagatsuma: J. Infrared Millimeter Terahertz Waves 32 (2011) 143.
3. H. Song and T. Nagatsuma: IEEE Trans. Terahertz Sci. Technol. 1 (2011) 256.
4. I. Kallfass, J. Antes, T. Schneider, F. Kurz, D. Lopez-Diaz, S. Diebold, H. Massler, A. Leuther, and A. Tessmann: IEEE Trans. Terahertz Sci. Technol. 1 (2011) 477.
5. K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, and S. Arai: Electron. Lett. 48 (2012) 582.
6. R. Kǒhler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfeld, A. G. Davies, D. A. Ritchie, R. C. Iotti, and F. Rossi: Nature 417 (2002) 156.
7. B. S. Williams: Nat. Photonics 1 (2007) 517.
8. S. Fathololoumi, E. Dupont, C. W. I. Chan, Z. R. Wasilewski, S. R. Laframboise, D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, and H. C. Liu: Opt. Express 20 (2012) 3866.
9. L. A. Samoska: IEEE Trans. Terahertz Sci. Technol. 1 (2011) 9.
10. M. Seo, M. Urteaga, J. Hacker, A. Young, Z. Griffith, V. Jain, R. Pierson, P. Rowell, A. Skalare, A. Peralta, R. Lin, D. Pukala, and M. Rodwell: IEEE J. Solid-State Circuits 46 (2011) 2203.
11. O. Momeni and E. Afshari: IEEE J. Solid-State Circuits 46 (2011) 583.
12. E. R. Brown, J. R. Sǒnderstrǒm, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill: Appl. Phys. Lett. 58 (1991) 2291.
13. M. Reddy, S. C. Martin, A. C. Molnar, R. E. Muller, R. P. Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, H. Kroemer, and S. J. Allen: IEEE Electron Device Lett. 18 (1997) 218.
14. S. Suzuki, A. Teranishi, K. Hinata, M. Asada, H. Sugiyama, and H. Yokoyama: Appl. Phys. Express 2 (2009) 054501.
15. M. Shiraishi, H. Shibayama, K. Ishigaki, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama: Appl. Phys. Express 4 (2011) 064101.
16. M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner: Appl. Phys. Lett. 99 (2011) 233506.
17. S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama: Appl. Phys. Lett. 97 (2010) 242102.
18. H. Kanaya, H. Shibayama, S. Suzuki, and M. Asada: presented at 24th Int. Conf. Indium Phosphide and Related Materials, 2012, Tu-1E.5.
19. M. Asada, S. Suzuki, and N. Kishimoto: Jpn. J. Appl. Phys. 47 (2008) 4375.
20. M. Tsuchiya and H. Sakaki: Appl. Phys. Lett. 49 (1986) 88.
21. A. Teranishi, S. Suzuki, K. Shizuno, M. Asada, H. Sugiyama, and H. Yokoyama: IEICE Trans. Electron. E95-C (2012) 401; in this paper, the actual well thickness of sample #4 was described as the designed value 4.5 nm. However, from the recent TEM observation, it was found to be 3.9 nm.