Frequency increase of resonant tunneling diode oscillators in sub-THz and THz range using thick spacer layers

Applied Physics Express

Volumn 1, Issue 4, 2008, Pages 0420031-0420033

  Kishimoto, Naomichi ^a   Suzuki, Safumi ^a   Teranishi, Atsushi ^a   Asada, Masahiro ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUBE DIODES; FREQUENCY DIVIDING CIRCUITS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODE OSCILLATORS; TUNNEL DIODES;

ASYMMETRIC STRUCTURES; BIAS DIRECTIONS; FORWARD BIASES; FREQUENCY SWITCHING; OSCILLATION FREQUENCIES; PARASITIC CAPACITANCES; REASONABLE AGREEMENTS; RESONANT TUNNELING DIODE OSCILLATORS; REVERSE BIASES; SPACER LAYER THICKNESSES; SPACER LAYERS; TERAHERTZ RANGES; THEORETICAL CALCULATIONS; THZ RANGES;

RESONANT TUNNELING;

EID: 57049176561     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.042003     Document Type: Article

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