SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 6, 2011, Pages

High output power (̃400μW) oscillators at around 550GHz using resonant tunneling diodes with graded emitter and thin barriers

(7) Shiraishi, Masato a Shibayama, Hirotaka a Ishigaki, Kaname a Suzuki, Safumi a Asada, Masahiro a Sugiyama, Hiroki b Yokoyama, Haruki b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH FREQUENCY; HIGH OUTPUT POWER; NEGATIVE DIFFERENTIAL CONDUCTANCE; OPTIMIZED STRUCTURES; OUTPUT POWER; PEAK CURRENT DENSITY; RESONANT TUNNELING DIODE OSCILLATORS; THIN BARRIERS;

ANTENNA ARRAYS; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES; SLOT ANTENNAS; TUNNEL DIODE OSCILLATORS;

RESONANT TUNNELING;

EID: 79958851193 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.064101 Document Type: Article

Times cited : (36)

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