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Volumn 323, Issue 1, 2011, Pages 60-63
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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices
a
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Author keywords
Molecular beam epitaxy; Nitrides; Semiconducting IIIV materials
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Indexed keywords
AMORPHOUS GAN;
AMORPHOUS PHASE;
AS CONTENT;
BAND GAPS;
COMPOSITION RANGES;
LARGE BAND;
LOW COSTS;
LOW TEMPERATURE MBE;
PYREX GLASS;
SEMI CONDUCTING III-V MATERIALS;
SOLAR CELL FABRICATION;
SOLAR SPECTRUM;
AMORPHOUS ALLOYS;
AMORPHOUS SILICON;
CRYSTALLINE MATERIALS;
ENERGY CONVERSION;
ENERGY GAP;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTING GLASS;
SEMICONDUCTING SILICON;
SOLAR ENERGY;
SOLAR RADIATION;
AMORPHOUS MATERIALS;
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EID: 79957982718
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.064 Document Type: Article |
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Times cited : (13)
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References (8)
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