Band gap energy of GaNAs grown on GaAs(0 0 1) substrates by metalorganic molecular-beam epitaxy

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 103-106

  Uesugi, K ^a   Suemune, I ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Absorption spectrum; Band gap energy; GaNAs; Metalorganic molecular beam epitaxy; X ray diffraction

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION EFFECTS; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

FIRST PRINCIPLE SUPERCELL MODEL; GALLIUM NITRIDE ARSENIDE; METALLORGANIC MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0032094756     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00040-2     Document Type: Article

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