Growth and dislocation etching of InBi1-xSex (x=0.15) single crystals

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 986-989

  Shah, Dimple ^a   Pandya, G R ^b   Vyas, S M ^c  

^a SARDAR VALLABHBHAI NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b M S UNIVERSITY OF BARODA   (India)

^c GUJARAT UNIVERSITY   (India)

Author keywords

A1. Etching; A1. Surface structure; A2. Growth from melt; A2. Single crystal growth; B2. Semiconducting III V material

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALLOGRAPHY; CRYSTALS; DISLOCATIONS (CRYSTALS); ETCHING; GRAIN BOUNDARIES; GROWTH (MATERIALS); METALLURGY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLIDS; SURFACE STRUCTURE; SURFACES; ZONE MELTING;

A1. ETCHING; A1. SURFACE STRUCTURE; A2. GROWTH FROM MELT; A2. SINGLE-CRYSTAL GROWTH; B2. SEMICONDUCTING III-V MATERIAL;

SINGLE CRYSTALS;

EID: 59749099777     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.196     Document Type: Article

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