Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing

Vacuum

Volumn 107, Issue , 2014, Pages 20-22

  Hotovy, I ^a   Hascik, S ^b   Gregor, M ^c   Rehacek, V ^a   Predanocy, M ^a   Plecenik, A ^c  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c Faculty of Natural Sciences   (Slovakia)

Author keywords

Dry etching; Inductively coupled plasma; X ray photoelectron spectroscopy

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATES; ETCHING CHARACTERISTICS; ETCHING MECHANISM; GAS SENSING; INDUCTIVELY COUPLED PLASMA POWER; INDUCTIVELY-COUPLED; NON-VOLATILE; TIO;

TITANIUM DIOXIDE;

EID: 84899004189     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2014.03.025     Document Type: Article

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