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Volumn 38, Issue , 2013, Pages 108-113

Weak light performance of PERC, PERT and standard industrial solar cells

Author keywords

PERC; PERT; Simulation; Weak light

Indexed keywords


EID: 84898757650     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2013.07.256     Document Type: Conference Paper
Times cited : (5)

References (25)
  • 2
    • 0001246856 scopus 로고
    • 24% efficient silicon solar cells
    • A. Wang, J. Zhao, and M.A. Green, "24% efficient silicon solar cells", Appl. Phys. Lett. 57 (6), 602-604 (1990).
    • (1990) Appl. Phys. Lett. , vol.57 , Issue.6 , pp. 602-604
    • Wang, A.1    Zhao, J.2    Green, M.A.3
  • 7
    • 0033364929 scopus 로고    scopus 로고
    • 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates
    • J. Zhao, A. Wang, and M.A. Green, "24.5% Efficiency Silicon PERT Cells on MCZ Substrates and 24.7% Efficiency PERL Cells on FZ Substrates", Prog. Photovolt: Res. Appl. 7, 471-474 (1999).
    • (1999) Prog. Photovolt: Res. Appl. , vol.7 , pp. 471-474
    • Zhao, J.1    Wang, A.2    Green, M.A.3
  • 10
    • 80052079238 scopus 로고    scopus 로고
    • Improving screen printed metallization for large area industrial solar cells based on n-type material
    • A. Edler, V. Mihailetchi, R. Kopecek, R. Harney, T. Böscke, D. Stichenoth et al., "Improving screen printed metallization for large area industrial solar cells based on n-type material", Energy Procedia 8, 493-497 (2011).
    • (2011) Energy Procedia , vol.8 , pp. 493-497
    • Edler, A.1    Mihailetchi, V.2    Kopecek, R.3    Harney, R.4    Böscke, T.5    Stichenoth, D.6
  • 13
    • 20444401538 scopus 로고    scopus 로고
    • Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
    • K. Bothe, R. Sinton, and J. Schmidt, "Fundamental Boron-Oxygen-related Carrier Lifetime Limit in Mono- and Multicrystalline Silicon", Prog. Photovolt: Res. Appl. 13, 287-296 (2005).
    • (2005) Prog. Photovolt: Res. Appl. , vol.13 , pp. 287-296
    • Bothe, K.1    Sinton, R.2    Schmidt, J.3
  • 14
    • 0001612762 scopus 로고    scopus 로고
    • Electronic properties of light-induced recombination centers in boron-doped czochralski silicon
    • J. Schmidt and A. Cuevas, "Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon", J. Appl. Phys. 86 (6), 3175-3180 (1999).
    • (1999) J. Appl. Phys. , vol.86 , Issue.6 , pp. 3175-3180
    • Schmidt, J.1    Cuevas, A.2
  • 15
    • 0037450271 scopus 로고    scopus 로고
    • Electronic properties of metastable defect in boron-doped czochralski silicon: Unambigous determination by advanced lifetime spectroscopy
    • S. Rein and S.W. Glunz, "Electronic properties of metastable defect in boron-doped Czochralski silicon: Unambigous determination by advanced lifetime spectroscopy", Appl. Phys. Lett. 82 (7), 1054-1056 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.7 , pp. 1054-1056
    • Rein, S.1    Glunz, S.W.2
  • 17
    • 0034228219 scopus 로고    scopus 로고
    • Reduced fill factors IN multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes
    • D. Macdonald and A. Cuevas, "Reduced Fill Factors IN Multicrystalline Silicon Solar Cells Due to Injection-level Dependent Bulk Recombination Lifetimes", Prog. Photovolt: Res. Appl. 8 (4), 363-375 (2000).
    • (2000) Prog. Photovolt: Res. Appl. , vol.8 , Issue.4 , pp. 363-375
    • Macdonald, D.1    Cuevas, A.2
  • 18
    • 50849122680 scopus 로고    scopus 로고
    • Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces
    • R. Bock, J. Schmidt, R. Brendel, H. Schuhmann, and M. Seibt, "Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces", J. Appl. Phys. 104 (4), 043701 (2008).
    • (2008) J. Appl. Phys. , vol.104 , Issue.4 , pp. 043701
    • Bock, R.1    Schmidt, J.2    Brendel, R.3    Schuhmann, H.4    Seibt, M.5
  • 20
    • 84857623464 scopus 로고    scopus 로고
    • Modelling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum
    • J. Müller, K. Bothe, S. Gatz, and R. Brendel, "Modelling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum", Phys. Status Solidi RRL 6 (3), 111-113 (2012).
    • (2012) Phys. Status Solidi RRL , vol.6 , Issue.3 , pp. 111-113
    • Müller, J.1    Bothe, K.2    Gatz, S.3    Brendel, R.4
  • 21
    • 80053183937 scopus 로고    scopus 로고
    • Contact formation and recombination at screen-printed local aluminum-alloyed silicon solar cell base contacts
    • J. Müller, K. Bothe, S. Gatz, H. Plagwitz, G. Schubert, and R. Brendel, "Contact Formation and Recombination at Screen-Printed Local Aluminum-Alloyed Silicon Solar Cell Base Contacts", IEEE Transactions on Electron Devices 58 (10), 3239-3245 (2011).
    • (2011) IEEE Transactions on Electron Devices , vol.58 , Issue.10 , pp. 3239-3245
    • Müller, J.1    Bothe, K.2    Gatz, S.3    Plagwitz, H.4    Schubert, G.5    Brendel, R.6
  • 23
    • 84865174608 scopus 로고    scopus 로고
    • Evaluation of series resistance losses in screen-printed solar cells with local rear contacts
    • S. Gatz, T. Dullweber, and R. Brendel, "Evaluation of Series Resistance Losses in Screen-Printed Solar Cells with Local Rear Contacts", IEEE J. Photovolt. 1 (1), 37-42 (2011).
    • (2011) IEEE J. Photovolt. , vol.1 , Issue.1 , pp. 37-42
    • Gatz, S.1    Dullweber, T.2    Brendel, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.