Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor-solid deposition

Journal of Crystal Growth

Volumn 396, Issue , 2014, Pages 24-32

  Hosein, Ian D ^a   Hegde, Manu ^a   Jones, Peter D ^a   Chirmanov, Vadim ^a   Radovanovic, Pavle V ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

A1. Crystal morphology; A1. Growth from vapor; A1. Nanostructures; A3.Growth models; B2. Phosphors; B2. Semiconducting gallium compounds

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; GALLIUM; MORPHOLOGY; OPTICAL PROPERTIES; VAPORS;

BROAD-BAND PHOTOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION METHODS; CROSS-SECTION MORPHOLOGY; CRYSTAL MORPHOLOGIES; GROWTH FROM VAPORS; MONOCLINIC CRYSTAL STRUCTURE; OPTO-ELECTRONIC STRUCTURES; VAPOR-SOLID GROWTH MECHANISM;

NANOWIRES;

EID: 84898461186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2014.03.037     Document Type: Article

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