Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Agrawal, Ashish ^a   Lin, Joyce ^b   Barth, Michael ^a   White, Ryan ^c   Zheng, Bo ^d   Chopra, Saurabh ^d   Gupta, Shashank ^d   Wang, Ke ^a   Gelatos, Jerry ^d   Mohney, Suzanne E ^b   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; EFFECTIVE BARRIER HEIGHTS; EXPERIMENTAL EVIDENCE; HIGH CONDUCTIVITY; INSULATOR THICKNESS; INTERFACIAL LAYER; METAL-INSULATOR-SEMICONDUCTORS; SUBSTRATE DOPING;

FERMI LEVEL; MIS DEVICES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

SILICON;

EID: 84897846809     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4868302     Document Type: Article

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