Mechanical and fracture behaviors of defective silicon nanowires: Combined effects of vacancy clusters, temperature, wire size, and shape

Applied Physics A: Materials Science and Processing

Volumn 114, Issue 4, 2014, Pages 1247-1256

  Kuo, Jenn Kun ^a   Huang, Pei Hsing ^b   Wu, Wei Te ^b   Lu, Chi Ming ^b  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; BRITTLE-TO-DUCTILE TRANSITION (BDT); FORMATION ENERGIES; FRACTURE BEHAVIOR; MOLECULAR DYNAMICS MODELING; OPERATION TEMPERATURE; SILICON NANOWIRES; ULTIMATE STRENGTH;

ELASTIC MODULI; FRACTURE TOUGHNESS; MOLECULAR DYNAMICS; NANOWIRES; SILICON; VACANCIES;

WIRE;

EID: 84897595425     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-013-7886-x     Document Type: Article

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