메뉴 건너뛰기




Volumn 17, Issue 3, 2000, Pages 215-217

Calculation of defects in silicon by a new tight-binding model

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC PROPERTIES; SILICON;

EID: 0034379424     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/3/021     Document Type: Article
Times cited : (5)

References (15)
  • 10
  • 13
    • 0004882455 scopus 로고    scopus 로고
    • C. Z. Wang, B. C. Pan and K. M. Ho, J. Phys.:Condens. Matter. 11 (1999) 2043; C. Z. Wang, M. S. Tang, B. C. Pan, C. T. Chan and K. M. Ho, Materials Research Society Proceedings, edited by E. Kaxiras et al., (Materials Research Society, Pittsburgh, 1995) Vol. 408.
    • (1999) J. Phys.:Condens. Matter. , vol.11 , pp. 2043
    • Wang, C.Z.1    Pan, B.C.2    Ho, K.M.3
  • 14
    • 0004882455 scopus 로고    scopus 로고
    • edited by E. Kaxiras et al., Materials Research Society, Pittsburgh
    • C. Z. Wang, B. C. Pan and K. M. Ho, J. Phys.:Condens. Matter. 11 (1999) 2043; C. Z. Wang, M. S. Tang, B. C. Pan, C. T. Chan and K. M. Ho, Materials Research Society Proceedings, edited by E. Kaxiras et al., (Materials Research Society, Pittsburgh, 1995) Vol. 408.
    • (1995) Materials Research Society Proceedings , vol.408
    • Wang, C.Z.1    Tang, M.S.2    Pan, B.C.3    Chan, C.T.4    Ho, K.M.5
  • 15
    • 0032499194 scopus 로고    scopus 로고
    • K. M. Ho et al., Nature, 392 (1998) 582.
    • (1998) Nature , vol.392 , pp. 582
    • Ho, K.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.