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Volumn 17, Issue 3, 2000, Pages 215-217
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Calculation of defects in silicon by a new tight-binding model
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
ELECTRONIC PROPERTIES;
SILICON;
CRYSTALLINE SILICONS;
DEFECT CONFIGURATIONS;
DI-VACANCY DEFECTS;
EXPERIMENTAL VALUES;
FORMATION ENERGIES;
GAP STATE;
MONOVACANCIES;
STRUCTURAL AND ELECTRONIC PROPERTIES;
SUPER CELL;
TIGHT-BINDING MODELING;
DEFECTS;
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EID: 0034379424
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/17/3/021 Document Type: Article |
Times cited : (5)
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References (15)
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