Hydrogenation-induced edge magnetization in armchair MoS2 nanoribbon and electric field effects

Applied Physics Letters

Volumn 104, Issue 7, 2014, Pages

  Ouyang, Fangping ^a   Yang, Zhixiong ^a   Ni, Xiang ^b   Wu, Nannan ^a   Chen, Yu ^a   Xiong, Xiang ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD EFFECTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HYDROGENATION; LAYERED SEMICONDUCTORS; MAGNETIC FIELD EFFECTS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANORIBBONS; NITROGEN COMPOUNDS;

ANTIFERROMAGNETIC SEMICONDUCTORS; DENSITY FUNCTIONAL THEORY STUDIES; EDGE STATE; ELECTRONIC AND MAGNETIC PROPERTIES; FERROMAGNETIC SEMICONDUCTOR; NON-MAGNETIC SEMICONDUCTORS; TRANSVERSE ELECTRIC FIELD;

SULFUR COMPOUNDS;

EID: 84897459581     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4865902     Document Type: Article

References (38)

1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
2. S. Z. Butler, S. M. Hollen, L. Y. Cao, Y. Cui, J. A. Gupta, H. R. Gutierrez, T. F. Heinz, S. S. Hong, J. X. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, ACS Nano 7, 2898 (2013). 10.1021/nn400280c
3. X. Huang, Z. Y. Zeng, and H. Zhang, Chem. Soc. Rev. 42, 1934 (2013). 10.1039/c2cs35387c
4. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
5. S. W. Han, H. Kwon, S. K. Kim, S. Ryu, W. S. Yun, D. H. Kim, J. H. Hwang, J. S. Kang, J. Baik, H. J. Shin, and S. C. Hong, Phys. Rev. B 84, 045409 (2011). 10.1103/PhysRevB.84.045409
6. A. Kumar and P. K. Ahluwalia, Eur. Phys. J. B 85, 186 (2012). 10.1140/epjb/e2012-30070-x
7. S. Lebegue and O. Eriksson, Phys. Rev. B 79, 115409 (2009). 10.1103/PhysRevB.79.115409
8. E. S. Kadantsev and P. Hawrylak, Solid State Commun. 152, 909 (2012). 10.1016/j.ssc.2012.02.005
9. J. K. Ellis, M. J. Lucero, and G. E. Scuseria, Appl. Phys. Lett. 99, 261908 (2011). 10.1063/1.3672219
10. A. Kuc, N. Zibouche, and T. Heine, Phys. Rev. B 83, 245213 (2011). 10.1103/PhysRevB.83.245213
11. H. Jiang, J. Phys. Chem. C 116, 7664 (2012). 10.1021/jp300079d
12. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
13. B. Radisavljevic and A. Kis, Nature Mater. 12, 815 (2013). 10.1038/nmat3687
14. S. Das, H. Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013). 10.1021/nl303583v
15. Y. Ding, Y. L. Wang, J. Ni, L. Shi, S. Q. Shi, and W. H. Tang, Phys. B: Condens. Matter 406, 2254 (2011). 10.1016/j.physb.2011.03.044
16. Y. D. Ma, Y. Dai, M. Guo, C. W. Niu, J. B. Lu, and B. B. Huang, Phys. Chem. Chem. Phys. 13, 15546 (2011). 10.1039/c1cp21159e
17. C. Ataca and S. Ciraci, J. Phys. Chem. C 115, 13303 (2011). 10.1021/jp2000442
18. W. Zhou, X. L. Zou, S. Najmaei, Z. Liu, Y. M. Shi, J. Kong, J. Lou, P. M. Ajayan, B. I. Yakobson, and J. C. Idrobo, Nano Lett. 13, 2615 (2013). 10.1021/nl4007479
19. Y. Li, Z. Zhou, S. Zhang, and Z. Chen, J. Am. Chem. Soc. 130, 16739 (2008). 10.1021/ja805545x
20. R. Shidpour and M. Manteghian, Chem. Phys. 360, 97 (2009). 10.1016/j.chemphys.2009.04.015
21. R. Shidpour and M. Manteghian, Nanoscale 2, 1429 (2010). 10.1039/b9nr00368a
22. Q. Yue, S. Chang, J. Kang, X. Zhang, Z. Shao, S. Qin, and J. Li, J. Phys. Condens. Matter 24, 335501 (2012). 10.1088/0953-8984/24/33/335501
23. C. Ataca, H. Sahin, E. Aktuürk, and S. Ciraci, J. Phys. Chem. C 115, 3934 (2011). 10.1021/jp1115146.
24. L. Z. Kou, C. Tang, Y. Zhang, T. Heine, C. F. Chen, and T. Frauenheim, J. Phys. Chem. Lett. 3, 2934 (2012). 10.1021/jz301339e
25. E. Erdogan, I. H. Popov, A. N. Enyashin, and G. Seifert, Eur. Phys. J. B 85, 33 (2012). 10.1140/epjb/e2011-20456-7
26. K. Dolui, C. Das Pemmaraju, and S. Sanvito, ACS Nano 6, 4823 (2012). 10.1021/nn301505x
27. S. Q. Yang, D. X. Li, T. R. Zhang, Z. L. Tao, and J. Chen, J. Phys. Chem. C 116, 1307 (2012). 10.1021/jp2097026
28. X. J. Liu, G. Zhang, Q. X. Pei, and Y. W. Zhang, Appl. Phys. Lett. 103, 133113 (2013). 10.1063/1.4823509
29. Y. F. Li, D. H. Wu, Z. Zhou, C. R. Cabrera, and Z. F. Chen, J. Phys. Chem. Lett. 3, 2221 (2012). 10.1021/jz300792n
30. R. K. Ghosh and S. Mahapatra, IEEE Trans. Electron Devices 60, 274 (2013). 10.1109/TED.2012.2226729
31. H. Liu, J. J. Gu, and P. D. Ye, IEEE Electron Device Lett. 33, 1273 (2012). 10.1109/LED.2012.2202630
32. S. S. Datta, D. R. Strachan, S. M. Khamis, and A. T. C. Johnson, Nano Lett. 8, 1912 (2008). 10.1021/nl080583r
33. A. R. Botello-Mendez, F. Lopez-Urias, M. Terrones, and H. Terrones, Nanotechnology 20, 325703 (2009). 10.1088/0957-4484/20/32/325703
34. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
35. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 78, 1396 (1997). 10.1103/PhysRevLett.78.1396
36. N. Troullier and J. Martins, Solid State Commun. 74, 613 (1990). 10.1016/0038-1098(90)90686-6
37. L. Fernandez Seivane, H. Barron, S. Botti, M. A. L. Marques, A. Rubio, and X. Lopez-Lozano, J. Mater. Res. 28, 240 (2013). 10.1557/jmr.2012.355
38. G. Stollhoff, A. M. Ole, and V. Heine, Phys. Rev. B 41, 7028 (1990). 10.1103/PhysRevB.41.7028