Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

Ceramics International

Volumn 40, Issue 6, 2014, Pages 8715-8722

  Destro, F B ^a   Moura, F ^b   Foschini, C R ^a   Ranieri, M G ^a   Longo, E ^a   Simoes A Z ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

Author keywords

Chemical synthesis; Electron diffraction; Ferroelectricity; Thin films

Indexed keywords

BISMUTH; COERCIVE FORCE; DEGRADATION; ELECTRON DIFFRACTION; FERROELECTRICITY; FILM GROWTH; IRON OXIDES; NEODYMIUM; SILICON; SYNTHESIS (CHEMICAL); THIN FILMS;

COERCIVE FIELD; ELECTRICAL BEHAVIORS; INTEGRATED DEVICE; LOW-LEAKAGE CURRENT; OXIDATION STATE; ROOM TEMPERATURE; SOFT CHEMICAL METHOD; SWITCHING CYCLES;

ELECTRIC PROPERTIES;

EID: 84897389789     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.01.090     Document Type: Article

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