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Volumn 220, Issue 1-2, 2000, Pages 100-104

Growth of (1 0 0)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; FILM PREPARATION; HYSTERESIS; LANTHANUM COMPOUNDS; SEMICONDUCTING SILICON; SOL-GELS; SUBSTRATES; THIN FILMS;

EID: 0034322491     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00742-9     Document Type: Article
Times cited : (69)

References (14)
  • 13
    • 85031561791 scopus 로고
    • JCPDS 33-710 and 33-711
    • Wustenberg, Inst. Fur Kristallogr., Techische Hochschule, Aachen, Germany
    • JCPDS 33-710 and 33-711, Wustenberg, H., Hahn, Inst. Fur Kristallogr., Techische Hochschule, Aachen, Germany, JCPDS Grant-in-Aid Report, 1981.
    • (1981) JCPDS Grant-in-Aid Report
    • Hahn, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.