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Volumn 47, Issue 13, 2014, Pages

Low temperature reduction in Ta-O and Nb-O thin films

Author keywords

oxides; reduction; resistive switching; x ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; OXIDES; PHOTOELECTRONS; REDUCTION; SWITCHING SYSTEMS; TANTALUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84896924828     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/13/135301     Document Type: Article
Times cited : (12)

References (22)
  • 1
    • 67650102619 scopus 로고    scopus 로고
    • Redox-based resistive switching memories - Nanoionic mechanisms, prospects, and challenges
    • 10.1002/adma.200900375
    • Waser R, Dittmann R, Staikov G and Szot K 2009 Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges Adv. Mater. 21 2632-63
    • (2009) Adv. Mater. , vol.21 , pp. 2632-2663
    • Waser, R.1    Dittmann, R.2    Staikov, G.3    Szot, K.4
  • 2
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
    • Sawa A 2008 Resistive switching in transition metal oxides Mater. Today 11 28-36 (Pubitemid 351680723)
    • (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
    • Sawa, A.1
  • 3
    • 33645641019 scopus 로고    scopus 로고
    • Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
    • 10.1038/nmat1614 1476-1122
    • Szot K, Speier W, Bihlmayer G and Waser R 2006 Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Nature Mater. 5 312-20
    • (2006) Nature Mater. , vol.5 , pp. 312-320
    • Szot, K.1    Speier, W.2    Bihlmayer, G.3    Waser, R.4
  • 4
    • 84884133449 scopus 로고    scopus 로고
    • In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure
    • 10.1038/ncomms3382
    • Park G-S et al 2013 In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure Nature Commun. 4 2382
    • (2013) Nature Commun. , vol.4 , pp. 2382
    • Park, G.-S.1
  • 5
    • 84877790976 scopus 로고    scopus 로고
    • Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
    • 10.1038/srep01680
    • Kim S, Kim S-J, Kim K M, Lee S R, Chang M, Cho E, Kim Y-B, Kim C J, -In Chung U and Yoo I-K 2013 Physical electro-thermal model of resistive switching in bi-layered resistance-change memory Sci. Rep. 3 1680
    • (2013) Sci. Rep. , vol.3 , pp. 1680
    • Kim, S.1    Kim, S.-J.2    Kim, K.M.3    Lee, S.R.4    Chang, M.5    Cho, E.6    Kim, Y.-B.7    Kim, C.J.8
  • 6
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • DOI 10.1038/nmat2023, PII NMAT2023
    • Waser R and Aono M 2007 Nanoionics-based resistive switching memories Nature Mater. 6 833-40 (Pubitemid 350064191)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 8
    • 0037469456 scopus 로고    scopus 로고
    • Catalytic application of niobium compounds
    • 10.1016/S0920-5861(02)00343-7 0920-5861
    • Tanabe K 2003 Catalytic application of niobium compounds Catal. Today 78 65-77
    • (2003) Catal. Today , vol.78 , pp. 65-77
    • Tanabe, K.1
  • 9
    • 33746725320 scopus 로고    scopus 로고
    • 2
    • DOI 10.1016/j.physb.2006.03.051, PII S0921452606007411
    • Hanada N, Ichikawa T and Fujii H 2006 Catalytic effect of niobium oxide on hydrogen storage properties of mechanically ball milled MgH2 Phys. B: Condens. Matter 383 49-50 (Pubitemid 44160647)
    • (2006) Physica B: Condensed Matter , vol.383 , Issue.1 , pp. 49-50
    • Hanada, N.1    Ichikawa, T.2    Fujii, H.3
  • 10
    • 33747143534 scopus 로고    scopus 로고
    • 2 sensing material
    • DOI 10.1016/j.snb.2005.11.015, PII S0925400505008932
    • Hyodo T, Ohoka J, Shimizu Y and Egashira M 2006 Design of anodically oxidized Nb2O5 films as a diode-type H2 sensing material Sensors Actuators B 117 359-66 (Pubitemid 44302069)
    • (2006) Sensors and Actuators, B: Chemical , vol.117 , Issue.2 , pp. 359-366
    • Hyodo, T.1    Ohoka, J.2    Shimizu, Y.3    Egashira, M.4
  • 12
    • 20344396603 scopus 로고    scopus 로고
    • 5 in bilayered structures and solid solutions for use in MIM capacitors
    • DOI 10.1149/1.1885365
    • Matsui Y, Hiratani M, Kimura S and Asano I 2005 Combining Ta2O5 and Nb2O5 in bilayered structures and solid solutions for use in MIM capacitors J. Electrochem. Soc. 152 F54-9 (Pubitemid 40785614)
    • (2005) Journal of the Electrochemical Society , vol.152 , Issue.5
    • Matsui, Y.1    Hiratani, M.2    Kimura, S.3    Asano, I.4
  • 13
    • 79960642086 scopus 로고    scopus 로고
    • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
    • 10.1038/nmat3070 1476-1122
    • Lee M-J et al 2011 A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures Nature Mater. 10 625-30
    • (2011) Nature Mater. , vol.10 , pp. 625-630
    • Lee, M.-J.1
  • 14
    • 77958591143 scopus 로고    scopus 로고
    • Forming and switching mechanisms of a cation-migration-based oxide resistive memory
    • 10.1088/0957-4484/21/42/425205 0957-4484 425205
    • Tsuruoka T, Terabe K, Hasegawa T and Aono M 2010 Forming and switching mechanisms of a cation-migration-based oxide resistive memory Nanotechnology 21 425205
    • (2010) Nanotechnology , vol.21 , Issue.42
    • Tsuruoka, T.1    Terabe, K.2    Hasegawa, T.3    Aono, M.4
  • 15
    • 79951683193 scopus 로고    scopus 로고
    • Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application
    • 10.1016/j.cap.2010.12.005 1567-1739
    • Chen L, Sun Q-Q, Gu J-J, Xu Y, Ding S-J and Zhang D W 2011 Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application Curr. Appl. Phys. 11 849-52
    • (2011) Curr. Appl. Phys. , vol.11 , pp. 849-852
    • Chen, L.1    Sun, Q.-Q.2    Gu, J.-J.3    Xu, Y.4    Ding, S.-J.5    Zhang, D.W.6
  • 16
    • 77955402537 scopus 로고    scopus 로고
    • Reverse resistance switching in polycrystalline Nb2O5 films
    • 10.1016/j.tsf.2009.10.026 0040-6090
    • Jo Y, Sim H, Hwang H, Ahn K and Jung M-H 2010 Reverse resistance switching in polycrystalline Nb2O5 films Thin Solid Films 518 5676-8
    • (2010) Thin Solid Films , vol.518 , pp. 5676-5678
    • Jo, Y.1    Sim, H.2    Hwang, H.3    Ahn, K.4    Jung, M.-H.5
  • 17
    • 84878355470 scopus 로고    scopus 로고
    • Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics
    • 10.1116/1.4806766 0734-211X B 032206
    • Kim J, Mok I-S, Kim Y, Lee K, Ko D-H and Sohn H 2013 Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics J. Vac. Sci. Technol. B 31 032206
    • (2013) J. Vac. Sci. Technol. , vol.31
    • Kim, J.1    Mok, I.-S.2    Kim, Y.3    Lee, K.4    Ko, D.-H.5    Sohn, H.6
  • 18
    • 57049107402 scopus 로고    scopus 로고
    • Specular reflectivity from smooth and rough surfaces
    • 10.1007/978-3-540-88588-7-3 0075-8450
    • Gibaud A and Vignaud G 2009 Specular reflectivity from smooth and rough surfaces X-ray and Neutron Reflectivity (Lecture Notes in Physics) ed J Daillant and A Gibaud (Berlin: Springer) pp 85-131
    • (2009) X-ray and Neutron Reflectivity , vol.770 , pp. 85-131
    • Gibaud, A.1    Vignaud, G.2    Daillant, J.3    Gibaud, A.4
  • 20
    • 0028387002 scopus 로고
    • Calculations of electron inelastic mean free paths: V. Data for 14 organic compounds over the 50-2000 eV range
    • 10.1002/sia.740210302 0142-2421
    • Tanuma S, Powell C J and Penn D R 1994 Calculations of electron inelastic mean free paths: V. Data for 14 organic compounds over the 50-2000 eV range Surf. Interface Anal. 21 165-76
    • (1994) Surf. Interface Anal. , vol.21 , pp. 165-176
    • Tanuma, S.1    Powell, C.J.2    Penn, D.R.3
  • 21
    • 79953012810 scopus 로고    scopus 로고
    • Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components
    • 10.1063/1.3552980 054511
    • Jung K, Kim Y, Park Y S, Jung W, Choi J, Park B, Kim H, Kim W, Hong J and Im H 2011 Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components J. Appl. Phys. 109 054511
    • (2011) J. Appl. Phys. , vol.109
    • Jung, K.1    Kim, Y.2    Park, Y.S.3    Jung, W.4    Choi, J.5    Park, B.6    Kim, H.7    Kim, W.8    Hong, J.9    Im, H.10
  • 22
    • 79957511801 scopus 로고    scopus 로고
    • The thermal stability of Pt/Ir coated AFM tips for resistive switching measurements
    • 10.1016/j.apsusc.2011.03.149 0169-4332
    • Wojtyniak M, Szot K and Waser R 2011 The thermal stability of Pt/Ir coated AFM tips for resistive switching measurements Appl. Surf. Sci. 257 7627-32
    • (2011) Appl. Surf. Sci. , vol.257 , pp. 7627-7632
    • Wojtyniak, M.1    Szot, K.2    Waser, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.