Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Muller, J ^a   Boscke, T S ^f   Muller, S ^b   Yurchuk, E ^b   Polakowski, P ^a   Paul, J ^a   Martin, D ^b   Schenk, T ^b   Khullar, K ^b   Kersch, A ^e   Weinreich, W ^a   Riedel, S ^a   Seidel, K ^a   Kumar, A ^g   Arruda, T M ^g   Kalinin, S V ^g   Schlosser, T ^d   Boschke, R ^d   Van Bentum, R ^d   Schroder, U ^b   Mikolajick, T ^b,c   more..

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Namlab gGmbH   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d GLOBALFOUNDRIES   (Germany)

^e FH München   (Germany)

^f Bosch Solar Energy   (Germany)

^g OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894297755     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724605     Document Type: Conference Paper

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