Ultrathin metal/amorphous-silicon/metal diode for bipolar RRAM selector applications

IEEE Electron Device Letters

Volumn 35, Issue 2, 2014, Pages 199-201

  Zhang, Leqi ^a,b   Redolfi, Augusto ^a   Adelmann, Christoph ^a   Clima, Sergiu ^a   Radu, Iuliana P ^a   Chen, Yang Yin ^a   Wouters, Dirk J ^a,b   Groeseneken, Guido ^a,b   Jurczak, Malgorzata ^a   Govoreanu, Bogdan ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Amorphous silicon (a Si); bidirectional diode; bipolar RRAM; cross point array; metal silicon metal (MSM); selector

Indexed keywords

AMORPHOUS SILICON (A-SI); BIPOLAR RRAM; CROSS-POINT ARRAY; FAST SWITCHING; HIGH SELECTIVITY; RESISTIVE SWITCHING MEMORY; SELECTOR; ULTRA-THIN METALS;

AMORPHOUS SILICON; SILICON;

DIODES;

EID: 84893849720     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2293591     Document Type: Article

References (12)

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