Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM)

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 48-51

  Govoreanu, B ^a   Ajaykumar, A ^a,b   Lipowicz, H ^a,b   Chen, Y Y ^a,b   Liu, J C ^a,b   Degraeve, R ^a   Zhang, L ^a,b   Clima, S ^a   Goux, L ^a   Radu, I P ^a,b   Fantini, A ^a,b   Raghavan, N ^a,b   Kar, G S ^a   Kim, W ^a   Redolfi, A ^a   Wouters, D J ^a,b   Altimime, L ^a   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

data loss; HfO 2 based RRAM; Resistive RAM (RRAM); ultra thin oxide RRAM (UTO RRAM)

Indexed keywords

CAP LAYER THICKNESS; DATA LOSS; HFO 2-BASED RRAM; PERFORMANCE AND RELIABILITIES; PULSE CHARACTERISTICS; RESISTIVE RAMS (RRAM); SWITCHING VOLTAGES; ULTRA-THIN OXIDE;

CELLS; CYTOLOGY; HAFNIUM OXIDES; OPTIMIZATION;

RANDOM ACCESS STORAGE;

EID: 84883691826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582095     Document Type: Conference Paper

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