Field-effect transistors based on cubic indium nitride

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Oseki, Masaaki ^a   Okubo, Kana ^a   Kobayashi, Atsushi ^a   Ohta, Jitsuo ^a   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84893840902     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep03951     Document Type: Article

References (14)

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