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Volumn , Issue , 2003, Pages 317-320

A gate leakage reduction strategy for future CMOS circuits

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS OF MECHANISMS; CMOS CIRCUITS; GATE LEAKAGE REDUCTION; GATE LEAKAGES; INPUT PATTERNS; SUB-THRESHOLD LEAKAGE; TUNNELLING CURRENT; TWO-INPUT NAND GATES;

EID: 84893773446     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2003.1257136     Document Type: Conference Paper
Times cited : (20)

References (7)
  • 1
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    • A self-controllable-voltage-level (svl) circuit for low-power, high-speed cmos circuits
    • T. Enomoto et al., "A Self-Controllable-Voltage-Level (SVL) Circuit for Low-Power, High-Speed CMOS Circuits, " in European Solid-State Circuits Conference, ESSCIRC'2002', 2002, pp. 411-414.
    • (2002) European Solid-State Circuits Conference, ESSCIRC'2002 , pp. 411-414
    • Enomoto, T.1
  • 2
    • 0034248817 scopus 로고    scopus 로고
    • A comparative study of gate di-rect tunneling and drain leakage currents in n-mosfet's with sub-2nm gate oxides
    • Aug
    • N. Yang et al., "A Comparative Study of Gate Di-rect Tunneling and Drain Leakage Currents in N-MOSFET's With Sub-2nm Gate Oxides, " IEEE Transactions on ED, vol. 47, no. 8, pp. 1636-1644, Aug. 2000.
    • (2000) IEEE Transactions on ED , vol.47 , Issue.8 , pp. 1636-1644
    • Yang, N.1
  • 3
    • 0032202447 scopus 로고    scopus 로고
    • Polarity dependent gate tunneling currents in dual-gate cmosfets
    • Nov
    • Ying Shi et al., "Polarity Dependent Gate Tunneling Currents in Dual-Gate CMOSFETs, " IEEE Transac-tions on ED, vol. 45, no. 11, pp. 2355-2360, Nov. 1998.
    • (1998) IEEE Transac-tions on ED , vol.45 , Issue.11 , pp. 2355-2360
    • Shi, Y.1
  • 4
    • 0035694264 scopus 로고    scopus 로고
    • Impact of gate direct tun-neling current on circuit performance: A simulation study
    • Dec
    • Chang-Hoon Choi et al., "Impact of Gate Direct Tun-neling Current on Circuit Performance: a Simulation Study, " IEEE Transactions on ED, vol. 48, no. 12, pp. 2823-2829, Dec. 2001.
    • (2001) IEEE Transactions on ED , vol.48 , Issue.12 , pp. 2823-2829
    • Choi, C.-H.1
  • 5
    • 0035367617 scopus 로고    scopus 로고
    • Characterization and modeling of edge direct tunneling (edt) leakage in ultrathin gate oxide mosfet's
    • June
    • K. N. Yang et al., "Characterization and Modeling of Edge Direct Tunneling (EDT) Leakage in Ultrathin Gate Oxide MOSFET's, " IEEE Transactions on ED, vol. 48, no. 6, pp. 1159-1164, June 2001.
    • (2001) IEEE Transactions on ED , vol.48 , Issue.6 , pp. 1159-1164
    • Yang, K.N.1
  • 6
    • 0034453479 scopus 로고    scopus 로고
    • BSIM4 gate leakage model in-cluding source-drain partition
    • K. M. Cao et al., "BSIM4 Gate Leakage Model In-cluding Source-Drain Partition, " in IEDM Technical Digest, IEDM, 2000, pp. 815-818.
    • (2000) IEDM Technical Digest, IEDM , pp. 815-818
    • Cao, K.M.1
  • 7
    • 0038306265 scopus 로고    scopus 로고
    • Zigzag super cut-off cmos (zsccmos) block activation with self-adaptive voltage level controller: An alternative to clock-gating scheme in leakage dominant era
    • Kyeong-Sik Min et al., "Zigzag Super Cut-off CMOS (ZSCCMOS) Block Activation with Self-Adaptive Voltage Level Controller: An Alternative to Clock-Gating Scheme in Leakage Dominant Era, " in Digest of Technical Papers, ISSCC, 2003, pp. 400-402.
    • (2003) Digest of Technical Papers, ISSCC , pp. 400-402
    • Min, K.-S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.