Influence of incorporation of Al3+ ions on the structural, optical and AC impedance characteristics of spin coated ZnO thin films

Journal of Materials Science: Materials in Electronics

Volumn 25, Issue 1, 2014, Pages 361-368

  Suganya, L ^a   Sundaresan, B ^a   Sankareswari, G ^a   Ravichandran, K ^b   Sakthivel, B ^b  

^a AYYA NADAR JANAKI AMMAL COLLEGE   (India)

^b A V V M SRI PUSHPAM COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO FILMS; DOPED ZINC OXIDE THIN FILMS; DOPING CONCENTRATION; GRAIN BOUNDARY RESISTANCE; HEXAGONAL WURTZITE STRUCTURE; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; PREFERENTIAL ORIENTATION;

ALUMINUM; ELECTRIC IMPEDANCE; GRAIN BOUNDARIES; METALLIC FILMS; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTOR DOPING;

EID: 84893692339     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-013-1595-2     Document Type: Article

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