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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 390-397

Spectral properties of aluminium doped zinc oxide thin films prepared by SILAR method

(7) Chandramohan, R a,c Dhanasekaran, V b Ezhilvizhian, S a,c Vijayan, T A a Thirumalai, J d Peter, A John e Mahalingam, T b

a Sree Sevugan Annamalai College (India)

b ALAGAPPA UNIVERSITY (India)

c DRAVIDIAN UNIVERSITY (India)

d B S ABDUR RAHMAN CRESCENT INSTITUTE OF SCIENCE AND TECHNOLOGY (India)

e Government Arts College (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION REACTION; AL-DOPED ZNO; DIP METHOD; DOPED ZINC OXIDE THIN FILMS; EFFECTIVE MASS; HEXAGONAL STRUCTURES; OSCILLATOR STRENGTHS; PLASMA FREQUENCIES; POLYCRYSTALLINE; SILAR METHOD; SPECTRAL PROPERTIES; TRANSMITTANCE SPECTRA; TRANSPARENT THIN FILM;

ADSORPTION; APPROXIMATION ALGORITHMS; NANORODS; NANOWIRES; OPTICAL CONDUCTIVITY; OPTICAL CONSTANTS; PLASMA WAVES; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; THIN FILMS; ZINC OXIDE;

FILM PREPARATION;

EID: 84856735875 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0439-1 Document Type: Article

Times cited : (22)

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