Effect of annealing on the stoichiometry of CdS films deposited by silar technique

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 5, Issue 10, 2011, Pages 1072-1077

  Senthamilselvi, V ^a,b   Saravanakumar, K ^b   Anandhi, R ^b   Ravichandran, A T ^c   Ravichandran, K ^c  

^a Kunthavai Naachiyaar Government College for Women (Autonomous)   (India)

^b A V V M SRI PUSHPAM COLLEGE   (India)

^c NATIONAL COLLEGE   (India)

Author keywords

Annealing; CdS thin films; Elemental analysis; Silar; Stoichiometry; Structural and optical properties

Indexed keywords

ANNEALING; CADMIUM SULFIDE; CHEMICAL ANALYSIS; CRYSTALLINITY; ENERGY GAP; II-VI SEMICONDUCTORS; OPTICAL PROPERTIES; STOICHIOMETRY; SUBSTRATES;

CDS THIN FILMS; DEGREE OF CRYSTALLINITY; EFFECT OF ANNEALING; PHOTOVOLTAIC APPLICATIONS; SILAR; STRUCTURAL AND OPTICAL PROPERTIES; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; X-RAY DIFFRACTION STUDIES;

THIN FILMS;

EID: 80055055402     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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