Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length

European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference

Volumn , Issue , 2013, Pages 212-215

  Bauer, Maris ^a   Lisauskas, Alvydas ^a   Boppel, Sebastian ^a   Mundt, Martin ^a   Krozer, Viktor ^a,b   Roskos, Hartmut G ^a   Chevtchenko, Serguei ^b   Würfl, Joachim ^b   Heinrich, Wolfgang ^b   Tränkle, Gunther ^b  

^a GOETHE UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

AlGaN GaN terahertz detectors; Antenna coupled high electron mobility transistors; High responsivity devices; Integrated field effect transistors

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BROAD-BAND ANTENNA; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-RESPONSIVITY DEVICES; NOISE EQUIVALENT POWER; PHYSICAL DEVICES; TERAHERTZ DETECTION; TERAHERTZ DETECTORS;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; TERAHERTZ WAVE DETECTORS;

ANTENNAS;

EID: 84893487128     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

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