Terahertz detection by GaN/AlGaN transistors

Electronics Letters

Volumn 42, Issue 23, 2006, Pages 1342-1344

  El Fatimy, A ^a   Boubanga Tombet, S ^a   Teppe, F ^a   Knap, W ^a   Veksler, D B ^b   Rumyantsev, S ^b,f   Shur, M S ^b   Pala, N ^c   Gaska, R ^c   Fareed, Q ^c   Hu, X ^c   Seliuta, D ^d   Valusis, G ^d   Gaquiere, C ^e   Theron, D ^e   Cappy, A ^e  

^a UNIV MONTPELLIER   (France)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^d CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^e CNRS   (France)

^f IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CRYOGENICS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; RESONANCE;

NON-RESONANT DETECTION; RESONANT RESPONSE; TERAHERTZ RADIATION;

TRANSISTORS;

EID: 33750916727     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062452     Document Type: Article

References (13)

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