A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13 μm SiGe BiCMOS technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2013, Pages

  Ulusoy, A Çaǧri ^a,b   Kaynak, Mehmet ^c   Valenta, Václav ^a   Tillack, Bernd ^c,d   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IHP   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

BiCMOS integrated circuits; Low noise amplifiers; Millimeter wave communication; MMICs

Indexed keywords

BICMOS INTEGRATED CIRCUITS; CRITICAL DESIGN PARAMETERS; EMITTER DEGENERATION; MILLIMETER-WAVE COMMUNICATION; MMICS; MONOLITHICALLY INTEGRATED; SIGE BICMOS TECHNOLOGY; SILICON PLATFORMS;

BICMOS TECHNOLOGY; LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SILICON ALLOYS;

SEMICONDUCTING SILICON;

EID: 84893287227     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2013.6697456     Document Type: Conference Paper

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