A W-band ingaas/inalas/inp hemt low-noise amplifier mmic with 2.5DB noise figure and 19.4 DB gain at 94GHZ

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Mei, X B ^a   Lin, C H ^a   Lee, L J ^a   Kim, Y M ^a   Liu, P H ^a   Lange, M ^a   Cavus, A ^a   To, R ^a   Nishimoto, M ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

High electron mobility transisters (HEMT); InGaAs InAlAs InP; Low noise amplifier (LNA); Noise figure (NF); Ohmic contact; W band

Indexed keywords

ASSOCIATED GAIN; DC POWER; HIGH ELECTRON MOBILITY TRANSISTERS (HEMT); INGAAS/INALAS/INP; LOW-NOISE AMPLIFIER (LNA); W-BAND;

ELECTRIC CONTACTORS; ELECTRIC POWER MEASUREMENT; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; LOW NOISE AMPLIFIERS; NOISE FIGURE; OHMIC CONTACTS;

AUDIO FREQUENCY AMPLIFIERS;

EID: 70149100706     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702933     Document Type: Conference Paper

References (5)

1. P. D. Chow et al, "Ultra Low Noise High Gain W-band InP-based HEMT Downconverter", IEEE MTT-S Digest, pp 1041-1044, 1991
2. K. C. Hwang et al, " Very High Gain Millimeter-Wave InAlAs/InGaAs/GaAs metamorphic HEMT's", IEEE Electron Device Letters, Vol. 20, No. 11, pp551-553, 1999
3. R. Grundbacher et al, "High Performance Millimeter Wave 0.1μm InP HEMT MMIC LNAs Fabricated on 100 mm Wafers", Indium Phosphide and Related Materials Conference Proceedings, pp 284-287, 2004
4. W. R. Deal et al, "A W-band InAs/AlSb Low-Noise/Low- Power Amplifier", IEEE Microwave and Wireless Components Letters, Vol. 15, No. 4, pp 208-210, 2005
5. R. Lai, Y. C. Chou et al, "High Performance and High Reliability of 0.1 μm InP HEMT MMIC Technology on 100 mm InP substrates", Indium Phosphide and Related Materials Conference Proceedings, pp 63-66, 2007