47-77 GHz and 70-155 GHz LNAs in SiGe BiCMOS technologies

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2012, Pages

  Liu, Gang ^a   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

broadband amplifiers; Low noise amplifiers; millimeter wave integrated circuits; silicon bipolar BiCMOS process technology

Indexed keywords

DC POWER; DIFFERENTIAL CIRCUITS; FREQUENCY RANGES; MILLIMETER-WAVE INTEGRATED CIRCUITS; PEAK GAIN; SIGE BICMOS TECHNOLOGY; SILICON BIPOLAR/BICMOS; WIDE BANDWIDTH;

BANDWIDTH; BICMOS TECHNOLOGY; BROADBAND AMPLIFIERS; FREQUENCY BANDS; LOW NOISE AMPLIFIERS; SILICON ALLOYS;

SEMICONDUCTING SILICON;

EID: 84870672363     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BCTM.2012.6352641     Document Type: Conference Paper

References (5)

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