A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2012, Pages

  Lu, De Ren ^a   Hsu, Yu Chung ^a   Kao, Jui Chih ^a   Kuo, Jhe Jia ^a   Niu, Dow Chih ^b   Lin, Kun You ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

CMOS; Low noise amplifier; MMIC; W band

Indexed keywords

100 GHZ; CASCODE CONFIGURATION; CHIP SIZES; CMOS; CMOS PROCESSS; COMPRESSION POWER; DC CURRENT; HIGH-GAIN; SUPPLY VOLTAGES; W-BAND; WIDEBAND LOW-NOISE AMPLIFIER; WIDEBAND PERFORMANCE;

BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

LOW NOISE AMPLIFIERS;

EID: 84866788209     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2012.6259481     Document Type: Conference Paper

References (7)

1. B. Heydari, M. Bohsali, E. Adabi, and A. Niknejad, "Lowpower mm-wave components up to 104 GHz in 90 nm CMOS," in IEEE ISSCC Dig. Tech. Papers, 2007, pp. 200-597.
2. Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, and H. Wang, "A 86 to 108 GHz amplifier in 90 nm CMOS," IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp. 124-126, Feb. 2008.
3. Ning Zhang, Chih-Ming Hung, Kenneth, K. O., "80-GHz Tuned Amplifier in Bulk CMOS," IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp. 121-123, Feb. 2008.
4. D. Sandstrom, M. Varonen, M. Karkkainen, K. Halonen, "Wband CMOS amplifiers achieving +10dBm saturated output power and 7.5dB NF," in IEEE ISSCC Dig. Tech. Papers, 2009, pp. 486-487.
5. L. Zhou, C.-C. Wang, Z. Chen, P. Heydari, "A W-band CMOS receiver chipset for millimeter-Wave radiometer systems," IEEE J. Solid-State Circuits, vol. 46, no. 2, pp. 378-391, Feb. 201L.
6. M. Khanpour, K. W. Tang, P. Garcia, and S. P. Voinigescu, "A wideband W-band receiver front-end in 65-nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 8, pp. 1717-1730 Aug. 2008.
7. A. Tomkins, P. Garcia, S. P. Voinigescu, "A Passive W-Band imaging receiver in 65-nm bulk CMOS," IEEE J. Solid-State Circuits, vol. 45, no. 10, pp. 1981-1991, Feb. 2010.