Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2013, Pages

  Thome, Fabian ^a,b   Massler, Hermann ^a   Wagner, Sandrine ^a   Leuther, Arnulf ^a   Kallfass, Ingmar ^a   Schlechtweg, Michael ^a   Ambacher, Oliver ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

HEMTs; Low power electronics; Low noise amplifier; MMICs; Noise figure; W band

Indexed keywords

DC POWER CONSUMPTION; FREQUENCY RANGES; HEMTS; MILLIMETERWAVE MONOLITHIC INTEGRATED CIRCUITS (MMIC); MMICS; OPERATION FREQUENCY; ULTRA-LOW POWER CONSUMPTION; W-BAND;

HIGH ELECTRON MOBILITY TRANSISTORS; LOW POWER ELECTRONICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SEMICONDUCTING INDIUM;

LOW NOISE AMPLIFIERS;

EID: 84893264880     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2013.6697362     Document Type: Conference Paper

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