450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2012, Pages 229-232

  Leuther, A ^a   Tessmann, A ^a   Massler, H ^a   Aidam, R ^a   Schlechtweg, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

InGaAs; metamorphic high electron mobility transistor (mHEMT); submillimeter monolithic microwave integrated circuit (S MMIC); submillimeter wave amplifier

Indexed keywords

CIRCUIT DESIGNS; CIRCUIT GAIN; COMMON SOURCE AMPLIFIER; GATE LENGTH; GROUNDED COPLANAR WAVEGUIDES; INGAAS; INTRINSIC RESISTANCE; LINEAR GAIN; MAXIMUM DRAIN CURRENT; METAMORPHIC HEMTS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; PLANARIZATION PROCESS; SMALL SIGNAL MODEL; SUBMILLIMETERS; TRANSISTOR GAIN; TRANSIT FREQUENCY;

COPLANAR WAVEGUIDES; EXTRAPOLATION; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM PHOSPHIDE; INTEGRATED CIRCUIT MANUFACTURE; PHOTOLITHOGRAPHY; SCATTERING PARAMETERS; SUBMILLIMETER WAVES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84873101954     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2012.6403365     Document Type: Conference Paper

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