From GaN to ZnGa2O4 through a low-temperature process: Nanotube and heterostructure arrays

ACS Applied Materials and Interfaces

Volumn 6, Issue 2, 2014, Pages 882-887

  Lu, Ming Yen ^a,b   Zhou, Xiang ^a   Chiu, Cheng Yao ^b   Crawford, Samuel ^a   Gradečak, Silvija ^a  

^a Massachusetts Institute of Technology   (United States)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

gallium nitride (GaN); heterostructures; hydrothermal method; nanotubes; optical property; zinc gallate (ZnGa2O4)

Indexed keywords

CORE-SHELL NANOWIRES; GALLIUM NITRIDES (GAN); HYDROTHERMAL METHODS; HYDROTHERMAL PROCESS; LOW-TEMPERATURE PROCESS; OPTOELECTRONIC APPLICATIONS; PHOTOLUMINESCENCE PEAK; ZINC GALLATE;

HETEROJUNCTIONS; NANOTUBES; NANOWIRES; OPTICAL PROPERTIES; PHOTOELECTRONS; SHELLS (STRUCTURES); TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

GALLIUM NITRIDE;

GALLIUM; NANOTUBE; NANOWIRE; SILICON; ZINC OXIDE;

ARTICLE; CHEMISTRY; COLD; PARTICLE SIZE; TEMPERATURE;

COLD TEMPERATURE; GALLIUM; NANOTUBES; NANOWIRES; PARTICLE SIZE; SILICON; TEMPERATURE; ZINC OXIDE;

EID: 84892929926     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am404158f     Document Type: Article

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