Deposition of intrinsic hydrogenated amorphous silicon for thin-film solar cells - A comparative study for layers grown statically by RF-PECVD and dynamically by VHF-PECVD

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 2, 2014, Pages 198-207

  Zimmermann, T ^a,d   Flikweert, A J ^a   Merdzhanova, T ^a   Woerdenweber, J ^a   Gordijn, A ^a   Rau, U ^a   Stahr, F ^b   Dybek, K ^c   Bartha, J W ^d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Forschungs und Applikationslabor Plasmatechnik GmbH   (Germany)

^c Von Ardenne Anlagentechnik GmbH   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

degradation; dynamic deposition; hydrogenated amorphous silicon; solar cells; VHF PECVD

Indexed keywords

HOMOGENEOUS DEPOSITION; HYDROGEN CONCENTRATION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LINEAR PLASMA SOURCES; SOLAR CELL EFFICIENCIES; STABILIZED EFFICIENCY; THIN-FILM SILICON SOLAR CELLS; VHF-PECVD;

AMORPHOUS SILICON; DEGRADATION; DEPOSITION RATES; EFFICIENCY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SOURCES; SILICON SOLAR CELLS; SOLAR CELLS;

DEPOSITION;

EID: 84892820621     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2254     Document Type: Article

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