Nonideal diode behavior and bandgap renormalization in carbon nanotube p-n junctions

IEEE Transactions on Nanotechnology

Volumn 13, Issue 1, 2014, Pages 41-45

  Chang, Shun Wen ^a   Bergemann, Kevin ^b   Dhall, Rohan ^c   Zimmerman, Jeramy ^b   Forrest, Stephen ^b   Cronin, Stephen B ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c NONE   (United States)

Author keywords

Bandgap renormalization (BGR); carbon nanotube (CNT); minority carrier lifetime; p n junction; photodiode; schottky diode

Indexed keywords

BAND GAP RENORMALIZATION; ELECTROSTATIC DOPING; MINORITY CARRIER LIFETIMES; P-N JUNCTION; PARALLEL RESISTANCE; PN JUNCTION DIODES; REVERSE-SATURATION CURRENTS; SCHOTTKY DIODES;

CARBON NANOTUBES; DIODES; ELECTRON TUNNELING; ENERGY GAP; OPEN CIRCUIT VOLTAGE; PHOTODIODES; SCHOTTKY BARRIER DIODES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

SEMICONDUCTOR JUNCTIONS;

EID: 84892624582     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2287124     Document Type: Article

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